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2025-09-17 -- Ernest Hancock interviews James Corbett (Corbett Report) MP3&4
Whistleblower EXPOSES How Israel Brainwashes American Christians!
Joe Rogan listens to "How to destroy America"
This "Printed" House Is Stronger Than You Think
Top Developers Increasingly Warn That AI Coding Produces Flaws And Risks
We finally integrated the tiny brains with computers and AI
Stylish Prefab Home Can Be 'Dropped' into Flooded Areas or Anywhere Housing is Needed
Energy Secretary Expects Fusion to Power the World in 8-15 Years
ORNL tackles control challenges of nuclear rocket engines
Tesla Megapack Keynote LIVE - TESLA is Making Transformers !!
Methylene chloride (CH2Cl?) and acetone (C?H?O) create a powerful paint remover...
Engineer Builds His Own X-Ray After Hospital Charges Him $69K
Researchers create 2D nanomaterials with up to nine metals for extreme conditions
This indicates we could finally be close to a tipping point where nanotubes become a serious competitor to silicon in almost all areas of microelectronics.
Wireless device technology operating in the millimeter-wave regime (30 to 300 GHz) increasingly needs to offer both high performance and a high level of integration with complementary metal–oxide–semiconductor (CMOS) technology. Aligned carbon nanotubes are proposed as an alternative to III–V technologies in such applications because of their highly linear signal amplification and compatibility with CMOS. Carbonics report the wafer-scalable fabrication of aligned carbon nanotube field-effect transistors operating at gigahertz frequencies. The devices have gate lengths of 110 nm and are capable, in distinct devices, of an extrinsic cutoff frequency and maximum frequency of oscillation of over 100 GHz, which surpasses the 90 GHz cutoff frequency of radio-frequency CMOS devices with gate lengths of 100 nm and is close to the performance of GaAs technology. Carbonic devices offer good linearity, with distinct devices capable of a peak output third-order intercept point of 26.5 dB when normalized to the 1 dB compression power, and 10.4 dB when normalized to d.c. power.